Templatinduzierte Herstellung von Halbleiternanostrukturen durch Phasenseparation
microscopy of an Au surface after illumination with 3 beam pulsed laser interference
at the wavelength 532 nm. The strong gradients of
the laser illumination pattern lead to lateral material transport. Lateral
spacing of the dots is 1mm.
force microscopy of a self assembled monolayer (SAM) on Silicon after two
beam pulsed laser interference at the wavelength 266 nm. The
SAM has been locally removed, thus surface energies can modified locally.
Period of the lines is 400nm.
This is a topographic AFM image of a structure written into a silane self-assembled
monolayer (SAM), which was prepared directly on top of a polished silicon
wafer. The topographic contrast of about 2 nm is due to the AFM-tip induced
removal of monolayer within the »written« lines. The process
is schematically depicted in (b). Within the lines of the pattern the hydrophilic
silicon oxide surface is accessible.
This is a tapping mode phase image of a structure written into a polymer
brush layer. The 0.5 nm thick layer, was replaced by a layer of another
polymer. The contrast in the phase image which was taken after the samples
were dried at ambient conditions, reveals a high contrast in the tip sample
interaction between the elastomeric and the glassy polymer layer. A schematic
representation of the structuring process is depicted in (b).
pattern of a polymer film on a pre-patterned substrate. The polymer wets
preferentially the AFM-structured portions of the surface and forms narrow
channels with a width of about 80 nm. The excess material within
in the unstructured background forms small (50 nm diameter) droplets
with a relatively high contact angle. Our home-built structuring system
is shown in the upper right. A scheme of the cross section of a channel
and a droplet is shown in the lower right.